Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

AO4482L

Banner
productimage

AO4482L

MOSFET N-CH 100V 6A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AO4482L is an N-Channel MOSFET designed for power switching applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 6A at 25°C (Ta). With a maximum Rds(on) of 37mOhm at 6A and 10V Vgs, it offers efficient conduction. The AO4482L is housed in an 8-SOIC package, suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 44 nC at 10V and input capacitance (Ciss) of 2000 pF at 50V. Power dissipation is rated at 3.1W (Ta) with an operating temperature range of -55°C to 150°C (TJ). This device finds application in power management, industrial controls, and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Rds On (Max) @ Id, Vgs37mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id2.7V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 50 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
AONS520A70

N

product image
AONV110A60

N

product image
AOK065A60FD

LINEAR IC