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AO4478

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AO4478

MOSFET N-CH 30V 9A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AO4478 is an N-Channel enhancement mode power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current rating (Id) of 9A at 25°C, with a maximum power dissipation of 3.1W (Ta). Its low on-resistance of 19mOhm at 9A and 10V gate drive makes it suitable for efficient power switching. The AO4478 utilizes advanced MOSFET technology and is supplied in a compact 8-SOIC package for surface mounting, commonly found in automotive, industrial control, and power management systems. Key electrical characteristics include a gate charge (Qg) of 11 nC (max) at 10V and input capacitance (Ciss) of 560 pF (max) at 15V. It operates across a wide temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) up to ±25V.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Rds On (Max) @ Id, Vgs19mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds560 pF @ 15 V

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