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AO4476A

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AO4476A

MOSFET N-CH 30V 15A 8SO

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4476A is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 15A at 25°C, with a maximum power dissipation of 3.1W (Ta). The AO4476A exhibits a low on-resistance (Rds On) of 7.7mOhm at 15A and a 10V gate-source voltage (Vgs). It is housed in a standard 8-SOIC surface-mount package, facilitating integration into compact designs. Key electrical characteristics include a gate charge (Qg) of 24 nC (max) at 10V Vgs and an input capacitance (Ciss) of 1380 pF (max) at 15V Vds. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in various industries including consumer electronics, industrial automation, and automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta)
Rds On (Max) @ Id, Vgs7.7mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1380 pF @ 15 V

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