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AO4466L

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AO4466L

MOSFET N-CH 30V 9.4A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4466L is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and can handle a continuous drain current of 9.4A at 25°C (Ta), with a maximum power dissipation of 3.1W (Ta). The AO4466L offers a low on-resistance (Rds On) of 23mOhm at an Id of 9.4A and Vgs of 10V, facilitated by drive voltages ranging from 4.5V to 10V. Key electrical characteristics include a maximum gate charge (Qg) of 17 nC at 10V and an input capacitance (Ciss) of 820 pF at 15V. It operates across a wide temperature range of -55°C to 150°C (TJ) and is supplied in a compact 8-SOIC package suitable for surface mounting. This MOSFET is commonly utilized in power management circuits, consumer electronics, and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.4A (Ta)
Rds On (Max) @ Id, Vgs23mOhm @ 9.4A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds820 pF @ 15 V

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