AO4449L
MOSFET P-CH 30V 7A 8SOManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AO4449L is a P-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 7A at 25°C, with a maximum power dissipation of 3.1W (Ta). The AO4449L offers a low on-resistance (Rds On) of 34mOhm at 7A and 10V, optimized for performance across various drive voltages from 4.5V to 10V.
Key electrical characteristics include a maximum gate charge (Qg) of 16 nC at 10V and input capacitance (Ciss) of 910 pF at 15V. The MOSFET is housed in an 8-SOIC package and supports surface mounting. With an operating temperature range of -55°C to 150°C (TJ) and a maximum gate-source voltage (Vgs) of ±20V, the AO4449L is suitable for demanding environments. This device finds application in power management solutions across automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 15 V |
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