AO4447AL
MOSFET P-CH 30V 17A 8SOICManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AO4447AL is a P-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 17A at 25°C with a maximum power dissipation of 3.1W (Ta). The AO4447AL exhibits a low On-Resistance (Rds On) of 7mOhm at 17A and 10V, ensuring minimal conduction losses. It operates with a gate drive voltage range of 4V to 10V and has a threshold voltage (Vgs(th)) of 1.6V at 250µA. Key parameters include a maximum gate charge (Qg) of 105 nC at 10V and an input capacitance (Ciss) of 5500 pF at 15V. This device is housed in a standard 8-SOIC package, facilitating surface mounting. The AO4447AL is suitable for use in applications such as power management, battery charging, and motor control within the consumer electronics and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 15 V |
Request a Quote
Clients Also Buy
AO4266
MOSFET N-CH 60V 10A 8SO
AONV070V65G1
GAN
AOL1432
MOSFET N-CH 25V 12A/44A ULTRASO8
