AO4447
MOSFET P-CH 30V 15A 8SOICManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AO4447 is a P-Channel MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 15A at 25°C with a maximum power dissipation of 3.1W (Ta). The AO4447 exhibits a low on-resistance of 7.5mOhm at 15A and 10V Vgs, with a gate threshold voltage (Vgs(th)) of 1.6V at 250µA. Key electrical parameters include a maximum gate charge (Qg) of 120 nC at 10V and input capacitance (Ciss) of 6600 pF at 15V.
The AO4447 utilizes Metal Oxide technology and is packaged in an 8-SOIC (0.154", 3.90mm Width) form factor, suitable for surface mount assembly. It operates across a wide temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±20V. This component is commonly found in power management circuits, battery protection, and load switching within the automotive and industrial sectors. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 15 V |
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