AO4442L
MOSFET N-CHANNEL 75V 3.1A 8SOManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AO4442L is an N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 3.1A at 25°C, with a maximum power dissipation of 3.1W (Ta). The AO4442L offers a low Rds On of 130mOhm maximum at 3.1A and 10V of gate drive. Key electrical characteristics include an input capacitance (Ciss) of 350pF maximum at 37.5V and a gate charge (Qg) of 3.5 nC maximum at 4.5V, enabling fast switching speeds. It supports a gate-source voltage range of ±25V and has a threshold voltage (Vgs(th)) maximum of 3V at 250µA. This component is housed in an 8-SOIC package and is supplied on Tape & Reel (TR). The AO4442L is suitable for use in various industrial, consumer electronics, and power management applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 37.5 V |
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