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AO4442

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AO4442

MOSFET N-CH 75V 3.1A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4442 is an N-Channel MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 75V and a continuous drain current (Id) of 3.1A at 25°C ambient temperature, with a maximum power dissipation of 3.1W (Ta). The on-resistance (Rds On) is specified at a maximum of 130mOhm at 3.1A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 6.5 nC (max) at 10V and an input capacitance (Ciss) of 350 pF (max) at 37.5V. The AO4442 is housed in a standard 8-SOIC surface-mount package, with a wide operating temperature range of -55°C to 150°C (TJ). This device is suitable for use in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.1A (Ta)
Rds On (Max) @ Id, Vgs130mOhm @ 3.1A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 37.5 V

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