AO4441L
MOSFET P-CH 60V 4A 8SOICManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AO4441L is a P-Channel MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 4A at 25°C, with a maximum power dissipation of 3.1W (Ta). The AO4441L exhibits a low on-resistance (Rds On) of 100mOhm at 4A and 10V, and a gate charge (Qg) of 20 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 1120 pF at 30V.
The device operates across a temperature range of -55°C to 150°C (TJ) and is housed in a standard 8-SOIC package. It supports gate-source voltages (Vgs) from 4.5V to 10V for optimal Rds On performance, with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. This MOSFET is commonly utilized in power management circuits, battery charging systems, and general-purpose switching within automotive and industrial sectors. The AO4441L is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 30 V |
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