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AO4438

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AO4438

MOSFET N-CH 60V 8.2A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4438 is an N-Channel enhancement mode power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) capability of 8.2A at 25°C, with a maximum power dissipation of 3.1W. The AO4438 exhibits a low on-resistance of 22mOhm at 8.2A and 10V Vgs, supported by a gate drive range from 4.5V to 10V. Key electrical parameters include a maximum gate charge (Qg) of 58 nC at 10V and an input capacitance (Ciss) of 2300 pF at 30V. Operating across a temperature range of -55°C to 150°C, the AO4438 is housed in an 8-SOIC package and is supplied on tape and reel. This component is suitable for power management solutions in computing, industrial, and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8.2A (Ta)
Rds On (Max) @ Id, Vgs22mOhm @ 8.2A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 30 V

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