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AO4435L

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AO4435L

MOSFET P-CH 30V 10.5A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. MOSFET, part number AO4435L, is a P-Channel device with a Drain-to-Source Voltage (Vdss) of 30V. It offers a continuous drain current (Id) of 10.5A at 25°C and a maximum power dissipation of 3.1W at 25°C. This component features a low on-resistance (Rds On) of 14mOhm at 11A and 20V. The AO4435L is housed in a standard 8-SOIC (0.154", 3.90mm width) package and is supplied in Tape & Reel (TR) packaging. Key electrical parameters include a gate charge (Qg) of 24 nC maximum at 10V and input capacitance (Ciss) of 1400 pF maximum at 15V. The device operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power management applications across various industries, including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C10.5A (Ta)
Rds On (Max) @ Id, Vgs14mOhm @ 11A, 20V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)5V, 20V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 15 V

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