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AO4425L

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AO4425L

MOSFET P-CH 38V 14A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4425L is a P-Channel MOSFET designed for power management applications. This device features a Drain-to-Source Voltage (Vdss) of 38V and a continuous Drain Current (Id) of 14A at 25°C, with a maximum power dissipation of 3.1W. The Rds(On) is specified at a low 10mOhm at 14A and 20V Vgs. Optimized for efficient switching, the AO4425L has a Gate Charge (Qg) of 63 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 3800 pF maximum at 20V Vds. It operates across a wide temperature range from -55°C to 150°C. The MOSFET is housed in a standard 8-SOIC package, suitable for surface mounting. Applications for this component include power supplies, battery management, and general-purpose switching in the consumer electronics and industrial automation sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C14A (Ta)
Rds On (Max) @ Id, Vgs10mOhm @ 14A, 20V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)10V, 20V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)38 V
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3800 pF @ 20 V

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