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AO4419L

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AO4419L

MOSFET P-CH 30V 9.7A 8SO

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4419L is a P-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) capability of 9.7A at 25°C, with a maximum power dissipation of 3.1W (Ta). The AO4419L exhibits a low on-resistance (Rds On) of 20mOhm maximum at 9.7A and 10V Vgs. Key electrical parameters include a gate charge (Qg) of 32 nC maximum at 10V Vgs and input capacitance (Ciss) of 1900 pF maximum at 15V Vds. Operating across a junction temperature range of -55°C to 150°C, this MOSFET is housed in a standard 8-SOIC package, suitable for surface mount assembly. The AO4419L finds application in power management, battery charging, and motor control systems within the automotive and industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C9.7A (Ta)
Rds On (Max) @ Id, Vgs20mOhm @ 9.7A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id2.7V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 15 V

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