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AO4415

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AO4415

MOSFET P-CH 30V 8A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4415 is a P-Channel MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 8A at 25°C. With a maximum on-resistance (Rds On) of 26mOhm at 8A and 20V, it offers low conduction losses. The AO4415 is packaged in an 8-SOIC (0.154", 3.90mm Width) format, suitable for surface mounting. Its power dissipation is rated at 3W (Ta). Key electrical parameters include a gate charge (Qg) of 21 nC at 10V and an input capacitance (Ciss) of 1100 pF at 15V. This component is commonly utilized in power management, battery charging, and industrial automation systems. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Rds On (Max) @ Id, Vgs26mOhm @ 8A, 20V
FET Feature-
Power Dissipation (Max)3W (Ta)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)6V, 20V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 15 V

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