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AO4411

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AO4411

MOSFET P-CH 30V 8A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

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The Alpha & Omega Semiconductor Inc. AO4411 is a P-Channel enhancement mode MOSFET designed for power management applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 8A at 25°C. The AO4411 offers a low on-resistance (Rds On) of 32mOhm maximum at 8A and 10V gate-source voltage, contributing to efficient power transfer. It supports gate-source voltages from ±20V maximum and has a threshold voltage (Vgs(th)) of 2.4V maximum at 250µA. With a maximum power dissipation of 3.1W (Ta), this MOSFET is suitable for use in demanding applications. Key electrical characteristics include a gate charge (Qg) of 16 nC maximum at 10V and input capacitance (Ciss) of 760 pF maximum at 15V. The AO4411 is housed in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. This component finds utility in various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Rds On (Max) @ Id, Vgs32mOhm @ 8A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 15 V

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