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AO4409

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AO4409

MOSFET P-CH 30V 15A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

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Alpha & Omega Semiconductor Inc. AO4409 is a P-Channel Power MOSFET designed for efficient power management. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 15A at 25°C. The AO4409 exhibits a low on-resistance (Rds On) of 7.5mOhm at 15A and 10V gate-source voltage, minimizing conduction losses. With a maximum power dissipation of 3.1W (Ta), it is suitable for applications requiring thermal management. The MOSFET operates effectively across a wide temperature range of -55°C to 150°C. Key parameters include a gate charge (Qg) of 120 nC at 10V and input capacitance (Ciss) of 6400 pF at 15V. This component is housed in an 8-SOIC package and is supplied in Tape & Reel (TR). Industries utilizing this component include consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta)
Rds On (Max) @ Id, Vgs7.5mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id2.7V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6400 pF @ 15 V

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