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AO4407L

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AO4407L

MOSFET P-CH 30V 12A 8SO

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The AO4407L from Alpha & Omega Semiconductor Inc. is a P-Channel MOSFET designed for high-efficiency power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 12A at 25°C, with a maximum power dissipation of 3.1W. The AO4407L exhibits a low on-resistance (Rds On) of 14mOhm at 10A and 10V, ensuring minimal conduction losses. Its gate threshold voltage (Vgs(th)) is 3V at 250µA, and it supports gate-source voltages up to ±25V. Key parameters include an input capacitance (Ciss) of 2500pF at 15V and a gate charge (Qg) of 45nC at 10V. This MOSFET is housed in a standard 8-SOIC package, suitable for surface mounting and operating across a wide temperature range of -55°C to 150°C. It finds application in various industrial sectors, including consumer electronics and power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Rds On (Max) @ Id, Vgs14mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)5V, 20V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 15 V

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