AO4407B
MOSFET P-CH 30V 12A 8SOICManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AO4407B is a P-channel, enhancement mode MOSFET designed for power switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 12A at 25°C. The Rds(on) is specified at a maximum of 13mOhm when driven at 12A with a Vgs of 20V. With a gate charge (Qg) of 36nC (max) at 10V, it offers efficient switching characteristics. The AO4407B has a power dissipation of 3.1W (Ta) and is housed in an 8-pin SOIC package for surface mounting. Operating temperature range is from -55°C to 150°C. This component is commonly utilized in industrial automation, power management, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 12A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 15 V |
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