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AO4407AL

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AO4407AL

MOSFET P-CH 30V 12A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AO4407AL is a P-channel enhancement mode MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 12A at 25°C, with a maximum power dissipation of 3.1W. The AO4407AL exhibits a low on-resistance (Rds On) of 11mOhm at 12A and 20V Vgs, and a gate charge (Qg) of 39 nC at 10V. It is housed in an 8-SOIC package with surface mount capability and operates within a temperature range of -55°C to 150°C (TJ). Key parameters include Input Capacitance (Ciss) of 2600 pF at 15V Vds and a threshold voltage (Vgs(th)) of 3V at 250µA. This component is frequently utilized in power management solutions, automotive electronics, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Rds On (Max) @ Id, Vgs11mOhm @ 12A, 20V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)6V, 20V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 15 V

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