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AO4407

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AO4407

MOSFET P-CH 30V 12A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4407 is a P-Channel enhancement mode MOSFET designed for power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 12A at 25°C ambient. The low on-resistance, specified as 13mOhm maximum at 12A and 20V Vgs, is achieved with a Vgs(th) of 2.8V maximum at 250µA. Key parameters include a Gate Charge (Qg) of 36 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 2600 pF maximum at 15V Vds. The AO4407 is housed in a standard 8-SOIC package, suitable for surface mounting, and offers a maximum power dissipation of 3.1W. It operates across a wide temperature range of -55°C to 150°C. This component is commonly utilized in automotive, industrial, and consumer electronics power management solutions.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Rds On (Max) @ Id, Vgs13mOhm @ 12A, 20V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id2.8V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)5V, 20V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 15 V

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