AO4405E
MOSFET P-CHANNEL 30V 6A 8SOICManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AO4405E is a P-Channel enhancement mode MOSFET designed for power switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 6A at 25°C ambient. The low on-resistance of 45mOhm at 6A and 10V Vgs ensures efficient power transfer. With a maximum power dissipation of 2.5W (Ta) and a thermal junction temperature range of -55°C to 150°C, it is suitable for demanding environments. The AO4405E is housed in an 8-SOIC package for surface mounting and exhibits a gate charge of 16nC at 10V. Typical applications include power management, battery protection, and motor control within the consumer electronics and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 495 pF @ 15 V |
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