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AO4312

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AO4312

MOSFET N-CH 36V 23A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4312 is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source breakdown voltage (Vdss) of 36V and a continuous drain current (Id) of 23A at 25°C (Ta). The AO4312 exhibits a low on-resistance (Rds On) of 4.5mOhm maximum at 20A and 10V gate-source voltage, with a drive voltage range of 4.5V to 10V. Key parameters include a maximum gate charge (Qg) of 34 nC at 10V and an input capacitance (Ciss) of 2345 pF maximum at 18V. The MOSFET is housed in an 8-SOIC package, suitable for surface mount assembly, and offers a maximum power dissipation of 4.2W (Ta). Its operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power supplies, battery management systems, and automotive electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Ta)
Rds On (Max) @ Id, Vgs4.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)4.2W (Ta)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)36 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2345 pF @ 18 V

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