AO4302
MOSFET N-CH 30V 23A 8SOICManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AO4302 is an N-Channel MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 23A at 25°C ambient temperature, with a maximum power dissipation of 3.6W under the same conditions. The AO4302 exhibits a low on-resistance (Rds On) of 4mOhm at 20A and 10V Vgs, optimized for minimal conduction losses. Gate drive requirements are suitable for a 4.5V to 10V range, with a maximum gate-source voltage of ±20V. Key parameters include a maximum gate charge (Qg) of 63 nC at 10V and input capacitance (Ciss) of 3470 pF at 15V. The component is housed in a standard 8-SOIC (0.154", 3.90mm width) package, suitable for surface mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power management circuits for computing, industrial, and automotive sectors. The device is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3470 pF @ 15 V |
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