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AO4294A

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AO4294A

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Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4294A is an N-Channel AlphaSGT™ MOSFET designed for applications requiring high power density. This device features a drain-source breakdown voltage (Vdss) of 100 V and a continuous drain current (Id) of 11.5 A at 25°C ambient, with a maximum power dissipation of 3.1 W. The low on-resistance (Rds On) of 12 mOhm at 11.5 A and 10 V gate-source voltage ensures efficient power transfer. Key parameters include a gate charge (Qg) of 50 nC at 10 V and input capacitance (Ciss) of 2305 pF at 50 V. The AO4294A is housed in an 8-SOIC package suitable for surface mounting and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in power management solutions, industrial applications, and automotive systems.

Additional Information

Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11.5A (Ta)
Rds On (Max) @ Id, Vgs12mOhm @ 11.5A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2305 pF @ 50 V

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