AO4266
MOSFET N-CH 60V 10A 8SOManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AO4266, an N-Channel MOSFET, is engineered for high-efficiency power switching applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C. With a maximum on-resistance (Rds On) of 15mOhm at 10A and 10Vgs, it exhibits low conduction losses. The AO4266 is housed in an 8-SOIC package for surface mounting and offers a power dissipation of 3.1W (Ta). Key electrical characteristics include a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 1340 pF at 30V. It operates across a temperature range of -55°C to 150°C. This device finds application in power management, consumer electronics, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1340 pF @ 30 V |
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