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AO4260

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AO4260

MOSFET N-CH 60V 18A 8SOIC

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO4260 is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 18A at 25°C. The AO4260 offers a low on-resistance (Rds On) of 5.2 mOhm maximum at 18A and 10V Vgs, contributing to reduced conduction losses. With a maximum power dissipation of 3.1W, it is suitable for demanding thermal environments. The component is housed in an 8-SOIC package, designed for surface mounting, and is supplied on tape and reel. Key parameters include a gate charge (Qg) of 100 nC at 10V and input capacitance (Ciss) of 4940 pF at 30V. The operating temperature range is -55°C to 150°C. This MOSFET finds application in various sectors including automotive, industrial power supplies, and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Rds On (Max) @ Id, Vgs5.2mOhm @ 18A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4940 pF @ 30 V

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