AO3499
MOSFET P-CH 20V 3.5A SOT23-3Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AO3499 is a P-Channel enhancement mode MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 3.5A at 25°C ambient temperature, with a maximum power dissipation of 1.4W (Ta). The AO3499 exhibits a low on-resistance (Rds On) of 85mOhm maximum at 3.5A and 10V Vgs. It operates with a gate-source voltage range of ±12V and a threshold voltage (Vgs(th)) of 1.2V maximum at 250µA. Key parameters include a gate charge (Qg) of 10 nC maximum at 4.5V and input capacitance (Ciss) of 325 pF maximum at 10V. The AO3499 is available in a compact SOT-23-3 package, suitable for surface mounting and is supplied on tape and reel. This component finds application in various industries, including consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, SOT-23-3 Variant |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 10 V |
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