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AO3460

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AO3460

MOSFET N-CH 60V 650MA SOT23-3L

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO3460 is an N-Channel MOSFET designed for efficient power switching applications. This device features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 650mA at 25°C. The AO3460 exhibits a maximum Rds(On) of 1.7 Ohms at 650mA and 10V Vgs, with a gate-source threshold voltage (Vgs(th)) of 2.5V at 250µA. It is housed in a compact SOT-23-3 variant package, suitable for surface mounting. Key electrical characteristics include an input capacitance (Ciss) of 27pF at 30V. This MOSFET is rated for a maximum power dissipation of 1.4W (Ta) and operates across a temperature range of -55°C to 150°C. The AO3460 is commonly utilized in consumer electronics and industrial control systems. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C650mA (Ta)
Rds On (Max) @ Id, Vgs1.7Ohm @ 650mA, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds27 pF @ 30 V

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