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AO3459

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AO3459

MOSFET P-CH 30V 2.6A SOT23-3

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AO3459 is a P-Channel MOSFET designed for power management applications. This component features a Drain-Source Voltage (Vdss) of 30V and supports a continuous drain current (Id) of 2.6A at 25°C. The device exhibits a maximum On-Resistance (Rds On) of 110mOhm at 2.6A and 10V gate-source voltage. It operates from a gate drive voltage range of 4.5V to 10V, with a maximum gate-source voltage of ±20V. The AO3459 includes a threshold voltage (Vgs(th)) of 2.4V at 250µA. Key electrical characteristics include a maximum gate charge (Qg) of 12 nC and a maximum input capacitance (Ciss) of 197 pF. The device offers a power dissipation of 1.4W. Packaged in a SOT-23-3 surface mount configuration, it is supplied on tape and reel. This MOSFET is suitable for use in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Rds On (Max) @ Id, Vgs110mOhm @ 2.6A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds197 pF @ 15 V

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