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AO3457

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AO3457

MOSFET P-CH 30V 4.3A SOT23-3

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO3457 is a P-Channel enhancement mode MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 4.3 A at 25°C, with a maximum power dissipation of 1.4 W (Ta). The AO3457 exhibits a low on-resistance of 48 mOhm at 4.3 A and 10 V Vgs, supported by a gate drive voltage range from 4.5 V to 10 V. Key parameters include a maximum gate charge (Qg) of 20 nC and an input capacitance (Ciss) of 520 pF at 15 V Vds. The MOSFET is housed in a compact SOT-23-3 package, suitable for surface mounting. Operating across a temperature range of -55°C to 150°C (TJ), this component is widely utilized in automotive, industrial, and consumer electronics sectors requiring high-efficiency switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4.3A (Ta)
Rds On (Max) @ Id, Vgs48mOhm @ 4.3A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds520 pF @ 15 V

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