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AO3453

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AO3453

MOSFET P-CH 30V 2.6A SOT23-3

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AO3453 is a high-performance P-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 2.6A at 25°C, with a maximum power dissipation of 1.4W. The AO3453 offers a low on-resistance (Rds On) of 115mOhm at 2.6A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 15 nC at 10V and input capacitance (Ciss) of 260 pF at 15V. It operates across a temperature range of -55°C to 150°C. Packaged in a compact SOT-23-3 variant, this surface mount device is suitable for use in power management, battery protection, and consumer electronics. The AO3453 supports gate drive voltages from 2.5V to 10V, with a maximum Vgs of ±12V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Rds On (Max) @ Id, Vgs115mOhm @ 2.6A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id1.4V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds260 pF @ 15 V

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