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AO3442

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AO3442

MOSFET N-CH 100V 1A SOT23-3L

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO3442 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 1A at 25°C. The SOT-23-3 package offers a compact footprint for surface-mount assembly. Key electrical characteristics include a maximum On-Resistance (Rds On) of 630mOhm at 1A and 10V gate drive, with a gate charge (Qg) of 6nC at 10V. Input capacitance (Ciss) is rated at a maximum of 100pF at 50V. The AO3442 operates across a wide temperature range of -55°C to 150°C and supports a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is suitable for use in power management, consumer electronics, and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Rds On (Max) @ Id, Vgs630mOhm @ 1A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id2.9V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds100 pF @ 50 V

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