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AO3438

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AO3438

MOSFET N-CH 20V 3A SOT23-3L

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO3438 is an N-Channel enhancement mode MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 3A at 25°C, with a maximum power dissipation of 1.4W. The AO3438 exhibits a low on-resistance (Rds On) of 62mOhm at 3A and 4.5V, and its gate threshold voltage (Vgs(th)) is 1V at 250µA. The device supports a wide gate drive voltage range, with minimum Rds On achieved at 4.5V. Key capacitance specifications include an input capacitance (Ciss) of 320pF at 10V and a gate charge (Qg) of 3.8nC at 4.5V. The AO3438 is housed in a compact SOT-23-3 package and is supplied on tape and reel. This MOSFET is suitable for use in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs62mOhm @ 3A, 4.5V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds320 pF @ 10 V

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