AO3435
MOSFET P-CH 20V 2.9A SOT23-3LManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AO3435 is a P-Channel enhancement mode MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) capability of 2.9 A at 25°C ambient temperature, with a maximum power dissipation of 1 W. The AO3435 offers a low on-resistance (Rds On) of 70 mOhm maximum at 3.5 A and 4.5 V gate-source voltage. Gate drive requirements range from 1.5 V to 4.5 V, with a maximum gate-source voltage of ±8 V. Key electrical parameters include a maximum Ciss of 745 pF at 10 V and a Qg of 11 nC at 4.5 V. The AO3435 is housed in a compact SOT-23-3 package, suitable for surface mounting. This component finds application in various sectors including consumer electronics, industrial automation, and battery management systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, SOT-23-3 Variant |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 745 pF @ 10 V |
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