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AO3422L

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AO3422L

MOSFET N-CH 55V 2.1A SOT23-3

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO3422L is an N-Channel Power MOSFET designed for efficient switching applications. This device features a drain-to-source voltage (Vdss) of 55 V and a continuous drain current (Id) rating of 2.1 A at 25°C, with a maximum power dissipation of 1.25 W. The AO3422L exhibits a maximum on-resistance (Rds On) of 160 mOhm at 2.1 A and a gate-source voltage (Vgs) of 4.5 V. Key parameters include a gate charge (Qg) of 3.3 nC (max) at 4.5 V and an input capacitance (Ciss) of 300 pF (max) at 25 V. The MOSFET operates with a gate drive voltage range from 2.5 V to 4.5 V, with a maximum Vgs of ±12V and a threshold voltage (Vgs(th)) of 2 V (max) at 250 µA. This component is housed in a SOT-23-3 package, suitable for surface mounting and supplied in tape and reel. Applications include power management, battery protection, and general-purpose switching in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.1A (Ta)
Rds On (Max) @ Id, Vgs160mOhm @ 2.1A, 4.5V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs3.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds300 pF @ 25 V

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