Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

AO3421L

Banner
productimage

AO3421L

MOSFET P-CH 30V 2.6A SOT23-3L

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO3421L is a P-Channel MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 2.6 A at 25°C. The AO3421L exhibits a maximum on-resistance (Rds On) of 130 mOhm at 2.6 A and 10 V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 9 nC maximum at 10 V and input capacitance (Ciss) of 370 pF maximum at 15 V. With a maximum power dissipation of 1.4 W (Ta), it is suitable for surface mounting within a 3-SMD, SOT-23-3 Variant package. The operating temperature range is -55°C to 150°C (TJ). This component is utilized in various industries including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Rds On (Max) @ Id, Vgs130mOhm @ 2.6A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds370 pF @ 15 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
AO4266

MOSFET N-CH 60V 10A 8SO

product image
AONV070V65G1

GAN

product image
AOL1432

MOSFET N-CH 25V 12A/44A ULTRASO8