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AO3421E

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AO3421E

MOSFET P-CH 30V 3A SOT23-3L

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AO3421E is a P-Channel, 30V MOSFET designed for efficient power switching applications. This component features a maximum continuous drain current (Id) of 3A at 25°C and a low on-resistance (Rds On) of 95mOhm at 3A and 10V gate-source voltage. The device is packaged in a compact SOT-23-3 variant, suitable for surface mount assembly. Key parameters include a gate charge (Qg) of 8 nC maximum at 10V and input capacitance (Ciss) of 215 pF maximum at 15V drain-source voltage. With a maximum power dissipation of 1.4W (Ta) and an operating temperature range of -55°C to 150°C, the AO3421E is well-suited for use in portable electronics, consumer devices, and power management solutions. The threshold gate-source voltage (Vgs(th)) is 2.5V maximum at 250µA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs95mOhm @ 3A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds215 pF @ 15 V

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