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AO3420L

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AO3420L

MOSFET N-CHANNEL 20V 6A SOT23-3

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO3420L is an N-Channel MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 6 A at 25°C, with a maximum power dissipation of 1.4 W (Ta). The AO3420L exhibits a low on-resistance (Rds On) of 24 mOhm at 6 A and 10 V, and a typical gate charge (Qg) of 12.5 nC at 10 V. It supports a gate-source drive voltage range from 1.8 V to 10 V and has a threshold voltage (Vgs(th)) of 1.1 V at 250 µA. The input capacitance (Ciss) is specified at a maximum of 630 pF at 10 V. Packaged in a SOT-23-3 (3-SMD, SOT-23-3 Variant), this device is suitable for surface mounting and operates across an industrial temperature range of -55°C to 150°C. The AO3420L is commonly utilized in consumer electronics and industrial power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Rds On (Max) @ Id, Vgs24mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id1.1V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)1.8V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds630 pF @ 10 V

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