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AO3419L

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AO3419L

MOSFET P-CH 20V 3.5A SOT23-3

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AO3419L is a P-Channel, 20V trench MOSFET designed for efficient power switching. This component features a continuous drain current (Id) of 3.5A at 25°C and a maximum power dissipation of 1.4W. Its low on-resistance (Rds On) is specified at 75mOhm at 3.5A and 10V, with a gate-source threshold voltage (Vgs(th)) of 1.4V at 250µA. The AO3419L operates with a maximum gate-source voltage of ±12V and supports drive voltages from 2.5V to 10V. Key electrical characteristics include input capacitance (Ciss) of 620pF at 10V and gate charge (Qg) of 6.6nC at 4.5V. This device is housed in a compact SOT-23-3 (3-SMD, SOT-23-3 Variant) package, suitable for surface mounting, and is supplied in Tape & Reel (TR) packaging. It is engineered for applications in consumer electronics and automotive systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs75mOhm @ 3.5A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id1.4V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs6.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds620 pF @ 10 V

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