AO3418

MOSFET N-CH 30V 3.8A SOT23-3L

Manufacturer: Alpha & Omega Semiconductor Inc.

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Alpha & Omega Semiconductor Inc. AO3418 is an N-Channel MOSFET designed for efficient power switching. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 3.8A at 25°C. The AO3418 exhibits a maximum on-resistance (Rds On) of 60mOhm at 3.8A and 10V Vgs, with a threshold voltage (Vgs(th)) of 1.8V at 250µA. Key parameters include a low gate charge (Qg) of 3.2 nC at 4.5V Vgs and an input capacitance (Ciss) of 270 pF at 15V Vds. The MOSFET is housed in a SOT-23-3 package, suitable for surface mounting and supplied on tape and reel. With a maximum power dissipation of 1.4W (Ta), this component is utilized across various industrial applications requiring compact and reliable power management solutions. The operating temperature range is from -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	3-SMD, SOT-23-3 Variant
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	3.8A (Ta)
Rds On (Max) @ Id, Vgs	60mOhm @ 3.8A, 10V
FET Feature	-
Power Dissipation (Max)	1.4W (Ta)
Vgs(th) (Max) @ Id	1.8V @ 250µA
Supplier Device Package	SOT-23-3
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Vgs (Max)	±12V
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	270 pF @ 15 V