AO3415A

MOSFET P-CH 20V 5A SOT23-3L

Manufacturer: Alpha & Omega Semiconductor Inc.

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Alpha & Omega Semiconductor Inc. AO3415A is a P-Channel MOSFET designed for power management applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 5A at 25°C. The Rds On is specified at a maximum of 45mOhm at 4A and 4.5V Vgs. Key parameters include a Gate Charge (Qg) of 11 nC at 4.5V and an Input Capacitance (Ciss) of 940 pF at 10V Vds. The device supports drive voltages ranging from 1.5V to 4.5V and has a maximum Gate-Source Voltage (Vgs) of ±8V. The AO3415A is housed in a compact SOT-23-3 variant surface mount package, supplied in Tape & Reel. Its maximum power dissipation is 1.5W at 25°C. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in consumer electronics, industrial controls, and automotive systems where efficient power switching is required.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	3-SMD, SOT-23-3 Variant
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	P-Channel
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Rds On (Max) @ Id, Vgs	45mOhm @ 4A, 4.5V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Vgs(th) (Max) @ Id	900mV @ 250µA
Supplier Device Package	SOT-23-3
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Vgs (Max)	±8V
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	940 pF @ 10 V