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AO3414L

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AO3414L

MOSFET N-CHANNEL 20V 3A SOT23-3

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO3414L is an N-Channel MOSFET designed for high-efficiency switching applications. This component features a 20V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 3A at 25°C. The AO3414L exhibits a maximum on-resistance (Rds On) of 62mOhm at 3A and 4.5V Vgs, with a threshold voltage (Vgs(th)) of 1V at 250µA. Gate charge (Qg) is specified at a maximum of 3.8 nC at 4.5V, and input capacitance (Ciss) is 320 pF maximum at 10V Vds. The device is packaged in a compact SOT-23-3 (3-SMD, SOT-23-3 Variant) for surface mounting and supports a power dissipation of 1.4W (Ta). Operating temperature ranges from -55°C to 150°C. This MOSFET is commonly utilized in power management, portable electronics, and battery-powered devices. The part is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs62mOhm @ 3A, 4.5V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs3.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds320 pF @ 10 V

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