AO3413L

MOSFET P-CH 20V 3A SOT23-3

Manufacturer: Alpha & Omega Semiconductor Inc.

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Alpha & Omega Semiconductor Inc. AO3413L is a P-Channel enhancement mode MOSFET. This device features a drain-source breakdown voltage of 20V and a continuous drain current of 3A at 25°C, with a maximum power dissipation of 1.4W. The ON-resistance (Rds On) is specified at 97mOhm maximum when conducting 3A with a 4.5V gate-source voltage. Key parameters include a gate charge (Qg) of 6.1 nC at 4.5V and input capacitance (Ciss) of 540pF at 10V. The AO3413L is housed in a SOT-23-3 package, suitable for surface mounting and supplied on tape and reel. It is designed for operation across a temperature range of -55°C to 150°C. This component finds application in power management and switching circuits across various industries including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	3-SMD, SOT-23-3 Variant
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	P-Channel
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Rds On (Max) @ Id, Vgs	97mOhm @ 3A, 4.5V
FET Feature	-
Power Dissipation (Max)	1.4W (Ta)
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	SOT-23-3
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Vgs (Max)	±8V
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	6.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	540 pF @ 10 V