AO3409L
MOSFET P-CH 30V 2.6A SOT23-3Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AO3409L is a P-Channel enhancement mode MOSFET designed for power switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 2.6A at 25°C, with a maximum power dissipation of 1.4W (Ta). The AO3409L exhibits a maximum Rds On of 130mOhm at 2.6A and 10V Vgs. It is packaged in a compact SOT-23-3 (3-SMD, SOT-23-3 Variant) and is supplied on tape and reel. Key electrical parameters include a Gate Charge (Qg) of 9 nC (max) at 10V Vgs and an Input Capacitance (Ciss) of 370 pF (max) at 15V Vds. The operating temperature range is -55°C to 150°C (TJ) with a maximum Gate-Source Voltage (Vgs) of ±20V. This MOSFET is utilized in various industrial sectors including consumer electronics and portable devices.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, SOT-23-3 Variant |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 15 V |
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