Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

AO3409

Banner
productimage

AO3409

MOSFET P-CH 30V 2.6A SOT23-3L

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO3409 is a P-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 2.6A at 25°C, with a maximum power dissipation of 1.4W (Ta). The AO3409 exhibits a low on-resistance (Rds On) of 130mOhm at 2.6A and 10V Vgs. It is housed in a compact SOT-23-3 package, suitable for surface mounting. Key electrical parameters include a Gate Charge (Qg) of 9nC (max) at 10V Vgs and an Input Capacitance (Ciss) of 370pF (max) at 15V Vds. The operating temperature range is -55°C to 150°C (TJ). This component finds application in battery management, power supplies, and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Rds On (Max) @ Id, Vgs130mOhm @ 2.6A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds370 pF @ 15 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
AONS520A70

N

product image
AONV110A60

N

product image
AOK065A60FD

LINEAR IC