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AO3407L

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AO3407L

MOSFET P-CH 30V 4.1A SOT23-3

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AO3407L is a P-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source breakdown voltage (Vds) and a continuous drain current (Id) capability of 4.1A at 25°C. With a maximum on-resistance (Rds On) of 52mOhm at 4.1A and 10V gate-source voltage (Vgs), it offers low conduction losses. The AO3407L is packaged in a compact SOT-23-3 surface-mount configuration and supports operation across a wide temperature range of -55°C to 150°C. Typical applications include power management, battery charging circuits, and load switching in consumer electronics and industrial equipment. Key electrical parameters include a gate charge of 18 nC at 10V Vgs and an input capacitance of 840 pF at 15V Vds. The AO3407L is supplied on tape and reel.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4.1A (Ta)
Rds On (Max) @ Id, Vgs52mOhm @ 4.1A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds840 pF @ 15 V

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