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AO3401

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AO3401

MOSFET P-CH 30V 4A SOT23-3

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO3401 is a P-Channel enhancement mode MOSFET designed for efficient power switching applications. This component features a drain-source breakdown voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 4A at 25°C, with a maximum power dissipation of 1.4W (Ta). The AO3401 exhibits a low on-resistance (Rds On) of 50mOhm at 4A and 10V Vgs, supported by a gate-source threshold voltage (Vgs(th)) of 1.3V at 250µA. Typical applications include power management, battery protection circuits, and load switching in consumer electronics and industrial control systems. The device is packaged in a compact SOT-23-3 (3-SMD, SOT-23-3 Variant) and supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 14 nC (max) at 10V and input capacitance (Ciss) of 645 pF (max) at 15V. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs50mOhm @ 4A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id1.3V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds645 pF @ 15 V

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