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AO3400

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AO3400

MOSFET N-CH 30V 5.8A SOT23-3

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AO3400 is an N-Channel enhancement mode MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 5.8A at 25°C, with a maximum power dissipation of 1.4W (Ta). The AO3400 exhibits a low on-resistance (Rds On) of 28mOhm at 5.8A and 10V Vgs. Key parameters include a maximum Gate Charge (Qg) of 7 nC at 4.5V Vgs and an input capacitance (Ciss) of 630 pF at 15V Vds. The MOSFET is supplied in a compact SOT-23-3 package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in power management, battery charging, and general-purpose switching circuits across various industries.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, SOT-23-3 Variant
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.8A (Ta)
Rds On (Max) @ Id, Vgs28mOhm @ 5.8A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id1.45V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds630 pF @ 15 V

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