AO3160E
MOSFET N-CH 600V 40MA SOT23A-3Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AO3160E is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 40mA at 25°C ambient temperature, with a maximum power dissipation of 1.39W (Ta). The AO3160E is housed in a SOT-23A-3 package, facilitating surface mounting. Key electrical parameters include a maximum on-resistance (Rds On) of 500 Ohms at 16mA and 10V Vgs, and a gate charge (Qg) of 0.9 nC at 10V Vgs. Input capacitance (Ciss) is a maximum of 9.5 pF at 25V Vds. The operating temperature range for this component is -55°C to 150°C. This MOSFET is suitable for use in power supply and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40mA (Ta) |
| Rds On (Max) @ Id, Vgs | 500Ohm @ 16mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.39W (Ta) |
| Vgs(th) (Max) @ Id | 3.2V @ 8µA |
| Supplier Device Package | SOT-23A-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5 pF @ 25 V |